unisonic technologies co., ltd utt100p03 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-697.a 100a, 30v p-channel power mosfet ? description the utc utt100p03 is a p-channel power mosfet using utc?s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. it can also withstand high energy in the avalanche. the utc utt100p03 is suitable for low voltage and high speed switching applications ? features * r ds(on) =3.3m ? @ v gs =-10v, i d =-80a * high switching speed ? symbol 1.gate 2.drain 3.source ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 utt100p03l-ta3-t UTT100P03G-TA3-T to-220 g d s tube note: pin assignment: g: gate d: drain s: source
utt100p03 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-697.a ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -30 v gate-source voltage v gss -16/+5 v drain current continuous (note 2) t c =25c, v gs =-10v i d -100 a t c =100c, v gs =-10v -100 (note 3) a pulsed (note 3) t c =25c i dm -400 a single pulsed avalanche energy i d =-80a e as 450 mj power dissipation t c =25c p d 200 w junction temperature t j +175 c storage temperature t stg -55~+175 c notes: 1. absolute maximum ratings are those val ues beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. current is limited by bondwire; with a jc = 0.65 c/w the chip is able to carry i d =-195a at 25c . 3. defined by design. not subject to production test. ? thermal data (note 2) parameter symbol ratings unit junction to ambient ja 62 c/w junction to case jc 0.65 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =-250a, v gs =0v -30 v drain-source leakage current i dss v ds =-30v, v gs =0v, t j =25c -0.1 -1 a v ds =-30v,v gs =0v,t c =125c (note 1) -10 -100 a gate-source leakage current forward i gss v gs =+16v, v ds =0v +10 +100 na reverse v gs =-16v, v ds =0v -10 -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-475a -1 -1.5 -2.1 v static drain-source on-state resistance r ds(on) v gs =-4.5v, i d =-50a 4.8 7.6 m ? v gs =-10, i d =-80a 3.3 4.3 m ? dynamic parameters (note 1) input capacitance c iss v gs =0v, v ds =-25v, f=1.0mhz 7150 9300 pf output capacitance c oss 2150 2800 pf reverse transfer capacitance c rss 1650 2500 pf switching parameters (note 1) total gate charge q g v dd =-24v, v gs =0~-10v, i d =-80a 150 200 nc gate to source charge q gs 25 33 nc gate to drain charge q gd 55 82.5 nc turn-on delay time t d ( on ) v dd =-15v, v gs =-10v, i d =-50a, r g =6 ? 30 ns rise time t r 45 ns turn-off delay time t d ( off ) 200 ns fall-time t f 180 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s t a = 25c (note 1) -100 a maximum body-diode pulsed current i sm t a = 25c (note 1) -400 a drain-source diode forward voltage v sd i s =-80a, v gs =0v -0.6 -1 -1.2 v body diode reverse recovery time t r r v r =-15v, i f =-50a, di f /dt=100a/s (note 1) 50 ns body diode reverse recovery charge q rr 55 nc notes: 1. defined by design. not subject to production test. 2. device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air.
utt100p03 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-697.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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